关于耦赛半导体公司
OSEMI公司于1994年秋成立于美国明尼苏达州，最早的客户包括若干知名的化合物半导体公司、中小企业以及许多大学的研究团队。1996年，公司进行栅氧化物外延技术的研发，包括GaAs、GaN、InP和SiC等化合物半导体材料。在OSEMI公司的名称中，O就蕴含氧化栅极的深意。
多年来OSEMI公司一直注重细节，凭借领先的产品品质实现业务的持续增长，公司最近发布的GO-GaNTM 和GO-GaAsTM材料和器件，得到了顾客的广泛认可。
1998年公司扩大洁净厂房、添置材料测试设备，主要包括精密的三轴XRD、PL、非接触式电阻成像仪、椭偏仪、霍尔效应仪、FTIR以及微分干涉显微镜等。
2003年公司再度斥资购入诸如电子束光刻的新装备和软件，以研发生产器件、电路、探测器、激光器等，用于无线/光通讯领域。目前OSEMI公司又引进了先进的器件测试设备和寿命测试设施。
2005年在加拿大新建半导体材料、器件生产工厂，2006年在欧洲、亚洲设立分支机构，以服务当地的顾客的需求。
About OSEMI Inc.
OSEMI, Inc. was formed in the fall of 1994. Our initial customers included several prominent compound semiconductor companies, several small companies, and research groups from various universities. In 1996 we began development of epitaxial Gate Oxides for Compound Semiconductors, including GaAs, GaN, InP and SiC. The ‘O’ in OSEMI is for the Gate Oxide, and we have recently released our GO-GaNTM and GO-GaAsTM materials and devices to qualified customers. Throughout the years, our business has continued to grow and expand because of our unparalleled quality and attention to detail. In 1998, we continued our expansion with the installation of additional clean room space, and materials characterization labs including, a State-of-the-art BEDE D1 X-ray diffractometer with Triple Axis capability, Photoluminescence (PL), non-contact resistivity mapping, ellipsometry, Hall, a Mattson Infinity FTIR, and high contrast Nomarski (DIC) microscopy. In 2003, we made a substantial investment in new equipment, including e-beam lithography and a stepper, and software that will allow OSEMI to produce the following: devices, circuits, photodetectors, and lasers that are the building blocks of both wireless and optical communications equipment. Recently we have added state-of-the-art electrical test equipment for device characterization and a life testing facility.
